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RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
DU2820S
Absolute Maximum Ratings at 25°C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p rJ TJ T STG 6JC 1 Rating 65 20 24 62.5 200 -55 to +150 2.8 t Units V V A W “C “C “Cl-W 1
J
1
4.04
1
4.55 7.39
[ I
X59 .259
1 I
.l79 291 I
1
K
L
1 6.58
1 .
DU2820S Datasheet
