Datasheet4U Logo Datasheet4U.com

MA4AGSW1A - AlGaAs SPST Non-Reflective PIN Diode Switch

General Description

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch.

Key Features

  • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology.
  • Silicon Nitride Passivation.
  • Polymide Scratch protection MA4AGSW1A Rev 2.0 MA4AGSW1A LAYOUT.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. • Silicon Nitride Passivation • Polymide Scratch protection MA4AGSW1A Rev 2.0 MA4AGSW1A LAYOUT DESCRIPTION M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz.