MA4AGSW1A Overview
M/A-’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD eptaxial wafer using a process designed for high device uniformity and extremely...
MA4AGSW1A Key Features
- Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation a
- Silicon Nitride Passivation
- Polymide Scratch protection