MADP-042005 Datasheet | Tyco Electronics

Features - - - - - - - Surface Mount, 5 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MADP-042005 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Part Forward Current Reverse Voltage Operating Temperature Storage Temperature Junction Temperature C.W. Incident Power (d Bm) Mounting Temperature 40 44 042 305 Absolute Maximum 042 405 250 m A l -80 V l -55 °C to +125 °C -55 °C to +150 °C +175 °C 43 35 042 505 042 905 Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This Vertical Topology provides for Exceptional Heat Transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in Moderate Incident Power ( 10 W C.W. ) and 50 W , 1 u S, 0.01 Duty Cycle, Peak Power, Series, Shunt, or Series-Shunt Switches. Smaller Parasitic Inductance, 0.4 n H, and Excellent RC Constant, make the devices ideal for Higher Frequency Switch Elements pared to their Plastic Device Counterparts. +300 °C for 10 seconds 1. Operation of this device above any one of these parameters may cause permanent damage. Case Style ODS-1306 Bottom Side Contacts are Circuit Side Dim A B C D E F G M/A- Inc. and its affiliates reserve the right to make changes...