MADP-064908-131000 Datasheet | Tyco Electronics

Features - No Wirebonds Required - Rugged Silicon-Glass Construction - Silicon Nitride Passivation & Polymer Scratch Protection - Ultra-Low Parasitic Capacitance and Inductance - Higher RF C.W. Power Handling - Better Performance than Alternative Packaged Devices MADP-064908-131000 Surmount TM PIN Chip V1 Absolute Maximum Ratings1 @ T A = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Storage Temperature Absolute Maximum 250 m A l - 100 V l -55 °C to +125 °C -55 °C to +150 °C +175 °C +35 d Bm +300 °C for 10 seconds Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-’s patented HMIC process. This 8.0 µm I-region length device features 6 silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of a pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. The vertical Silicon Diode topology provides for a highly efficient heat transfer medium. These packageless devices are suitable for usage in Higher ( 3 W Avg ) Incident Power Switches. Small Parasitic Inductance and Excellent RC Constant make the devices ideal for Absorptive SPST, Reflective SP2T Switches, and Attenuator Circuits, where higher P1db and Power Handling values are required. Junction Temperature C.W. Incident Power (d Bm) Mounting Temperature 1. Operation of this device above any one of these parameters may cause permanent damage. 0604 Case Style - ODS-1310 (Topview) 1 6 5 Side View D D D D D Dim A B C D Inches Min. Max. 0.060 0.062 0.036 0.004 0.011 0.038 0.008 0.012 Millimeters...