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MADS-002545-1307M - SURMOUNTTM Medium Barrier Silicon Schottky Diodes

General Description

The MADS-002545-1307M Series SurMount™ Medium Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Ultra Low Parasitic Capitance and Inductance.
  • Surface Mountable in Microwave Circuits , No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion.
  • Barrier, 100% Stabilization Bake (300 °C, 16 hours).
  • Lower Susceptibility to ESD Damage MADS-002545-1307M V1 Topview A B.

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www.DataSheet4U.com SURMOUNTTM Medium Barrier Silicon Schottky Diodes: Cross-Over Quad Series Ultra-small 600x600um Surface-Mount Chip Features • Ultra Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits , No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion • Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage MADS-002545-1307M V1 Topview A B Description and Applications The MADS-002545-1307M Series SurMount™ Medium Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.