MAPL-000817-015C00 Datasheet | Tyco Electronics

Features Designed for broadband mercial applications up to 1.7GHz - High Gain, High Efficiency and High Linearity - Typical P1d B performance at 960MHz, 26Vdc, CW - Typical Power Output: 16.5W - Gain: 16.5d B - Efficiency: 50% - 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz - Package Style Maximum Ratings Parameter Drain- Source Voltage Gate- Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 4 Unit ºC/W NOTE- CAUTION- MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V 1/11/06 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) Gate Threshold Voltage (Vds = 26 Vdc, Id = 100 m A) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 m A) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) RF FUNCTIONAL TESTS @ 25ºC (In M/A- Test Fixture) (1) mon Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 m A, f = 960 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 m A, f = 960 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 m A, f = 960 MHz, POUT = 15 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 100 m A, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) mon Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 m A, f = 1670 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 m A, f = 1670 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 m A, f = 1670 MHz, POUT = 15 W) Symbol Min Typ Max Unit V(BR)DSS VGS(th) 65 2 - - - 5 Vdc Vdc VDS(Q) - 5 Vdc VDS(on) - 0.25 - Vdc GP EFF (ŋ) IRL Ψ - - - 17 50 -10 - - - d B % d...