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MAPL-000817-015C00 - RF Power Field Effect Transistor

Features

  • Designed for broadband commercial.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 Preliminary MAPL-000817-015C00 Features Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 16.5dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz • Package Style MAPL-000817-015C00 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.
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