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MRF157 Datasheet Mos Linear Rf Power Fet

Manufacturer: Tyco Electronics (now TE Connectivity)

Overview: ( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transistor N–Channel Enhancement Mode Designed primarily for.

Key Features

  • r>.
  • to.
  • source threshold voltage, VGS(th). Cgd GATE Cgs DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds SOURCE REV 1 5 Gate Voltage Rating.
  • Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circuited or floating should be avoided. These conditions can result in.

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