MRF171A Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF171A/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET Designed primarily for wideband large signal output and driver stages from 30 200 MHz. Reasonable precautions in handling and packaging MOS devices should be observed. 30.001 MHz) Drain Efficiency (VDD = 28 V, Pout = 30 W (PEP).