MRF174 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement- Mode - Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) - Excellent Thermal Stability, Ideally Suited For Class A Operation - Facilitates Manual Gain Control, ALC and Modulation Techniques - 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR - Low Noise Figure - 3.0 dB Typ at 2.0 A, 150 MHz 125 W, to 200 MHz N- CHANNEL MOS BROADBAND RF POWER FET . . . designed primarily for wideband large- signal output and driver stages up to 200 MHz frequency range. G S...