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MRF175LV - N-CHANNEL BROADBAND RF POWER FET

Download the MRF175LV datasheet PDF. This datasheet also covers the MRF175LU variant, as both devices belong to the same n-channel broadband rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • xceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circuited or floating should be avoided. These conditions can result in turn.
  • on of the devices due to voltage build.
  • up on the input capacitor due to leakage currents or pickup. SOURCE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF175LU_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF175LV N-CHANNEL BROADBAND RF POWER FET Tyco Electronics
MRF175LU N-CHANNEL BROADBAND RF POWER FET Tyco Electronics
MRF175GU N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF175GV N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF171A MOSFET BROADBAND RF POWER FET Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF175LU N-CHANNEL BROADBAND RF POWER FET
MRF175GU N-CHANNEL MOS BROADBAND RF POWER FET
MRF173 (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF173CQ (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF174 N-CHANNEL MOS BROADBAND RF POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.