MRF175LV
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175LU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N- Channel Enhancement- Mode
Designed for broadband mercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
- Guaranteed Performance MRF175LU @ 28 V, 400 MHz (“U” Suffix) Output Power
- 100 Watts Power Gain
- 10 d B Typ Efficiency
- 55% Typ MRF175LV @ 28 V, 225 MHz (“V” Suffix) Output Power
- 100 Watts Power Gain
- 14 d B Typ Efficiency
- 65% Typ
- 100% Ruggedness Tested At Rated Output Power
- Low Thermal Resistance
- Low Crss
- 20 p F Typ @ VDS = 28 V
MRF175LU MRF175LV
100 W, 28 V, 400 MHz N- CHANNEL BROADBAND RF POWER FETs
CASE 333- 04, STYLE 2
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Drain Current
- Continuous Total Device Dissipation @ TC =...
