MRF175GU
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N- Channel Enhancement- Mode
Designed for broadband mercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
- Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power
- 200 Watts Power Gain
- 14 d B Typ Efficiency
- 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power
- 150 Watts Power Gain
- 12 d B Typ Efficiency
- 55% Typ
- 100% Ruggedness Tested At Rated Output Power
- Low Thermal Resistance
- Low Crss
- 20 p F Typ @ VDS = 28 V
G G S (FLANGE)
MRF175GU MRF175GV
200/150 WATTS, 28 V, 500 MHz N- CHANNEL MOS BROADBAND RF POWER FETs
CASE 375- 04, STYLE 2 D
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage...
