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MRF176GV - N-CHANNEL MOS BROADBAND RF POWER FET

Download the MRF176GV datasheet PDF. This datasheet also covers the MRF176GU variant, as both devices belong to the same n-channel mos broadband rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • e transfer (Crss) capacitances on data sheets. The relationships between the inter.
  • terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF176GU_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF176GU The RF MOSFET MACOM
MRF171A MOSFET BROADBAND RF POWER FET Tyco Electronics
MRF172 VHF POWER MOSFET Advanced Semiconductor
MRF173 N-CHANNEL BROADBAND RF POWER MOSFET Tyco Electronics
MRF173 The RF MOSFET MA-COM

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF176GU N-CHANNEL MOS BROADBAND RF POWER FET
MRF173 (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF173CQ (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs
MRF174 N-CHANNEL MOS BROADBAND RF POWER FET
MRF175GU N-CHANNEL MOS BROADBAND RF POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF176GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance MRF176GU @ 50 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 17 dB Typ Efficiency — 55% Typ • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance • Low Crss — 7.