PH1214-25M Datasheet | Tyco Electronics

Features - - - - - - - - NPN Silicon Microwave Power Transistor mon Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing Description M/A-’s PH1214-25M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for mon-base, class C, broadband pulsed power applications, the PH1214-25M can produce 25 watts of output power with medium pulse length (150 µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. In addition to L-band pulsed radars, this high performance transistor can also be used in pulsed digital munication systems. Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Broadband Test Fixture Impedance F (GHz) Z IF (Ω) 2.1 - j4.5 2.1 - j3.9 2.2 - j3.4 Z OF (Ω) 3.7 + j0.9 3.6 + j0.4 3.0 + j0.2 TEST FIXTURE OUTPUT CIRCUIT Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 60 3.0 2.8 58 -65 to +200 200 Units V V A W °C °C 1.20 1.30 1.40 TEST FIXTURE INPUT CIRCUIT 50Ω 50Ω Electrical Specifications at 25°C Symbol BVCES ICES RTH(JC) PIN GP η RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Breakdown Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 25 m A VCE = 40 V VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz VCC = 28...