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PH1214-300M - Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty

Key Features

  • Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
PH1214-2M Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz

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Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 Rev. 0 PH1214-300M Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.0 21.