PH1214-300M Datasheet | Tyco Electronics

Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor mon Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.0 21.0 620 -65 to +200 200 Units V V A W °C °C Electrical Characteristics @ 25 °C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Symbol BVCES ICES RTH(JC) PO GP Min. 90 300 8.75 50 10 Max. 10 .25 2:1 1.5:1 Units V m A °C/W W d B % d B IC=80 m A VCE=40 V VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz Test Conditions η RL VSWR-T VSWR-S Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 12/06/01 Sample Test Data (Broadband test fixture matched to 50 Ω.) P1d B Overdrive Freq. (GHz) Pin (W) Pout (W) Gain (d B) ∆Gain (d B) Eff. (%) Ic (A) Droop (d B) RL (d B) Pout (W) 451 ∆ Po (d B) 0.46 Gain (d B) 9.52 Droop (d B) 0.38 Eff. (%) 59.8 Rev. 0 VSWR-S 1.5:1 2:1 2.5:1 9.48 0.82 Note: ∆Po(d B) is the difference between Pout at 1d B overdrive and Pout at Pin = 40W. Power Output Curves PH1214-3...