Datasheet4U Logo Datasheet4U.com

PH1214-4M - Radar Pulsed Power Transistor/ 4W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C f _ .137.
  • 919 ~ (3.~8S.25) I 1 .004=.001 (.10+.03) UNLESS O-HERW:SE NOTED.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH1214-6M RADAR PULSED POWER TRANSISTOR MA-com
PH1225AL N-channel MOSFET NXP
PH128160T-066-L01Q LCD Module POWERTIP
PH128160T-066-L03Q Display Module POWERTIP
PH128800T002-ZBC01 LCD POWERTIP

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1214-40M Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
an AMP comDanv =7 = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C f _ .137* 919 ~ (3.~8S.25) I 1 .004=.001 (.10+.03) UNLESS O-HERW:SE NOTED. TLERANCES ARE INCHES (M!LL,METERS =.005' ~,13MM) Electrical Characteristics Parameter at 25°C Symbol Min Max Units Test Conditions Collector-Emitter Collector-Emitter Breakdown Voltage Leakage Current BV,,, ICES R THUCI P OUT G. I sic RL VSWR-T VSWR-S I 65 1.0 8.