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PH1214-55EL - Radar Pulsed Power Transistor/ SW/ 1 .Oms Pulse/ 10% Duty 1.2 - 1.4 GHz

Key Features

  • l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratinas at 25°C I Parameter 1 Collector-EmitterVoltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature 1 Symbol ) I V,,, vm ‘c P TOT T, T SIG 1 1 I Ratin.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
PH1214-2M Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz
PH1214-300M Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-40M Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-4M Radar Pulsed Power Transistor/ 4W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz
PH1214-80M Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-8M Radar Pulsed Power Transistor/ SW/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratinas at 25°C I Parameter 1 Collector-EmitterVoltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature 1 Symbol ) I V,,, vm ‘c P TOT T, T SIG 1 1 I Rating 58 3.0 7.0 100 200 -65 to +200 1 Units I v 1 I I v I A w “C “C LiNLESS UT’IERWISC NOTED. TDLER4NCES ARE INCHES (MI_LIMFirRS - - 1.