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Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz
v2.00
Features
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903 (22 85) J
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratinas at 25°C
I Parameter 1 Collector-EmitterVoltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature 1 Symbol ) I V,,, vm ‘c P TOT T, T SIG 1 1 I Rating 58 3.0 7.0 100 200 -65 to +200 1 Units I v 1 I
I v I
A w “C
“C
LiNLESS
UT’IERWISC
NOTED.
TDLER4NCES
ARE
INCHES (MI_LIMFirRS - -
1.