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PH2931-I3 - Radar Pulsed Power Transistor/ 135W/ 20ms Pulse/ 1% Duty 2.9 - 3.1 GHz

Key Features

  • NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic‘ FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C I Parameter Collector-EmitterVoltage Emitter-Base Voltage 1 Symbol V CES V ES0 ‘c P TOT T, T STG 1 Rating 80 3.0 12 580 200 -65 to +200 1 Units V V I I C+!:TiER I .003~.031 Collector Current (Peak.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2931-20M Radar Pulsed Power Transistor/ 20W/100ms Pulse/ 10% Duty 2.9-3.1 GHz
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PH2323-3 CW Power Transistor/ 3.5W 2.3 GHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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* .---= - = -M= ZF an AMP company z-s?=‘= 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic‘ FleWCeramic Package Matching Absolute Maximum Ratinas at 25°C I Parameter Collector-EmitterVoltage Emitter-Base Voltage 1 Symbol V CES V ES0 ‘c P TOT T, T STG 1 Rating 80 3.0 12 580 200 -65 to +200 1 Units V V I I C+!:TiER I .003~.031 Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature A W “C “C UNLESS OTELRWISE NDTE% TOLERANCES ARE (1.52’.05) INCHES (M,LLIMET~~S .060i.