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-F--z = -=-=c
=z z .-----= = E
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
.375= 213 (Y53:25)
Absolute Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
Broadband Test Fixture Impedances
F(GHr)
1.20 1.30 1.40
T:IST -
FIXTLjRE :WLlT CIRCUIT I
TCST
FIXTSE DCTPLIT CIRCLIIT /
z,,(n)
2.1 -j4.5 2.1 -j3.9 2.2 -j3.4
Z,,(Q)
3.7+jO.9 3.6+jO.4 3.O+jO.2
$
53R
50R q -
-!-
Specifications Subject to Change Without Notice.