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PHI214-6M - Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS C-iTRW:SE ‘ICTED. T3LE?ANCES A?E (xI, -- IN’HES =. O”‘j’ I.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz

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an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS C-iTRW:SE ‘ICTED. T3LE?ANCES A?E (xI, -- IN’HES =.O”‘j’ I IMETERS ; 13yy’ I Electrical Characteristics Parameter at 25°C Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current BV,,, ICES RW(X) PO”T GP ‘lC 65 1.
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