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an AMP company
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic ~MetaUCeramic Package
Absolute Maximum Ratings at 25°C
UNLLSS
O-HZRVISE
NZTEJ.
TOLERANCES
ARE
:HILLI~ETERS
t,13MM)
Broadband Test Fixture Impedances
F(GHz) 1.20 1.30 1.40 Z,,(Q) 9.4 - j7.8 8.8 - j7.3 8.1 - j7.2 z,,K4 8.5 + jS.9 9.2 + j4.9 5.3 + j4.7 j 1
YES-
FIXTURE
TEST
FIXTURE
Ci’icTT
1
50R
ZIFJ
1
Specifications Subject to Change Without Notice.
9-116
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