PHL819-45 Datasheet | Tyco Electronics

Features NPN Silicon Microwave Power Transistor mon Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) 900 Vl .oo .175=.315 (4.455.3a) Absblute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VCES VCES VEBO Ic PO TJ T ST0 8JC Rating 25 65 3.0 5.5 loo 200 -65 to ~200 1.3 Units V V V A w “C “c J! .157r.o10 r(4.24t.251 .003L.rl Ol (.08=.03)1 “CPA UNLCSS GTHCRWISE NOTED. TOLERANCCS IK-JES c MILLIYETr RS 2.005' =,13HM> Electrical Characteristics at 25°C Parameter Power Gain Collector Efficiency Input Return Loss L Load Mismatch Tolerance Symbol GP % Min 8 40 10 - Max 3:l Units d B % d B - lest Conditions V,,=25 V, lo=200 m A, P,e45 W, F=l805,1880 MHz V,c=25 V. lo=200 m A. PO,=45 W, F=l805,1880 MHz v,,=25 V, I,,=200 m A, PO,=45 W. F=1805.1880 MHz v,,=25 V, I,,=200 m A, PO,=45 W, F=l805,1880 MHz RL VSWR-T Broadband Test Fixture Im Dedances F(MHz) 1805 TEST =IXTURE TZST FIXTURE z,,(n) 2.0 - j3.8 I 2.0 - j3.8 2.0 - j3.7 I z&3 3.7 - jl.4 3.9 - jl.8 3.9 - j2.1 I 1...