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PHL819-45 - Wireless Bipolar Power Transistor/ 45W 1805 - 1880 MHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) PHl819-45 900 Vl . oo .175=.315 (4.455.3a) Absblute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol VCES VCES VEBO Ic PO TJ T ST0 8JC Rating 25 65 3.0 5.5 loo.

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Part Number Description Manufacturer

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHL819-33 Wireless Power Transistor/ 33W 1805 - 1880 MHz
PHL2143 Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHL516-10 Wireless Bipolar Power Transistor/ 1OW 1.45 - 1.60 GHz

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Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) PHl819-45 900 Vl .oo .175=.315 (4.455.3a) Absblute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol VCES VCES VEBO Ic PO TJ T ST0 8JC Rating 25 65 3.0 5.5 loo 200 -65 to ~200 1.3 Units V V V A w “C “c J! .157r.o10 r(4.24t.251 .003L.rlOl (.08=.03)1 “CPA UNLCSS GTHCRWISE NOTED. TOLERANCCS ARE IK-JES cMILLIYETrRS 2.