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Wireless Power Transistor, 33W 1805 - 1880 MHz
Features
l l l l l
PHl819-33
v2.01 I.744 (18.90)-1
NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
225 (5.72)*.015 (0.38)
, I
;48/6.30) &&y&T
1
*I
1
f
CqO(6.35)
Absolute’ Maximum Ratings at 25°C
I Parameter
Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTemperature Thermal Resistance
I Sym~l VCEO VcE.s Vem I ‘c PO T c-Fe ) T, 6JC
I
Rating
25 65 3.0
1 Units
V V
1
225(5.72)+.015
(0.38)
,181 (4.6O)zt.OlO (0.25)
(5.59)
2.20 I-.co5 (0.13)+.001 (0.03) 1 I / 11 D6Ojl.52) f
V
I
4.