AO4832
AO4832 is 30V Dual N-Channel MOSFET manufactured by UMW.
Description
The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and g eneral purpose applications.
UMW AO4832
30V Dual N-Channel MOSFET
2.Features
VDS (V)=30V ID=10A(VGS=10V) RDS(ON)<13mΩ(VGS=10V) RDS(ON)<17.5mΩ(VGS=4.5V)
3.Pinning information
Pin
Symbol Description
SOP-8
D1 D1 D2 D2
D1
D2
2,4
G1, G2
GATE
1,3 5,6,7,8
S1, S2 D1, D2
SOURCE DRAIN
G1
G2
S1 G1 S2 G2
S1
S2
4.Absolute Maximum Ratings TA=25°C unless otherwise noted
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current c Avalanche Current c Avalanche energy L=0.1m H c
Power Dissipation B
Junction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS
IDM IAS, IAR EAS, EAR
TJ,...
