AO4832 - 30V Dual N-Channel MOSFET

General Description

The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

AO4832 30v dual n-channel mosfet by EVVOSEMI - Datasheet Preview

Datasheet Details

Part number	AO4832
Manufacturer	EVVOSEMI
File Size	0.98 MB
Description	30V Dual N-Channel MOSFET
Datasheet	AO4832 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4832 General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 10A < 13mΩ < 17.5mΩ 30V Dual N-Channel MOSFET D1 D2 G1 G2 S1 S2 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.