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P0804BD8
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID 62A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
62 39 160
Avalanche Current Avalanche Energy2
L = 0.1mH
IAS EAS
52 137
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = 20V Starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.5 62.
P0804BD8 Datasheet
