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P0804BVG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 12mΩ @VGS = 10V
ID 12A
SOP- 08
100% UIS tested 100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC= 100 °C
ID IDM
12 8 50
Power Dissipation
TC = 25 °C TC = 100 °C
PD
2.5 1
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA RqCS
TYPICAL 0.
P0804BVG Datasheet
