UNIKC P0804BVG
N-Channel MOSFET
| Part No. | P0804BVG |
|---|---|
| Datasheet | P0804BVG Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC= 100 °C ID IDM 12 8 50 Power Dissipation TC = 25 °C TC = 100 °C PD 2.5 1 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.5 MAXIMUM 25 50 UNITS °C / W REV 1.1 1 2014-4-25 P0804BVG N-Channel Logic Level Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT
