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P0850AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.85Ω @VGS = 10V
ID 8A
TO-220
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2 Avalanche Current3
TC = 25 °C TC = 100 °C
ID
IDM IAS
8 5 30 6.8
Avalanche Energy
L = 10mH
EAS
232
Power Dissipation
TC = 25 °C TC = 100 °C
PD
125 50
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P0850AT Datasheet
