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P085AATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
55V 7.5mΩ @VGS = 10V
ID 110A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
110 69 300
Avalanche Current
IAS 106
Avalanche Energy
L = 0.1mH
EAS
561
Power Dissipation
TC = 25 °C TC = 100 °C
PD
166 66
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 0.75 62.5
UNITS °C / W
REV 1.
P085AATX Datasheet
