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P1004BS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
40V
11mΩ @VGS = 10V
53A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C
ID
53
TC = 100 °C
34
IDM
159
Avalanche Current
IAS
40
Avalanche Energy
L = 0.1mH
EAS
82
Power Dissipation
TC = 25 °C
PD
63
TC = 100 °C
25
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2The maximum current rating in limited by bond-wires.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS
2
°C / W
REV1.
P1004BS Datasheet
