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P1004BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A
TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range
2 1
SYMBOL VDS VGS
LIMITS 40 ±20 55 44 120 38 73 50 32 -55 to 150
UNITS V
TC = 25 ° C TC = 100 ° C
ID IDM IAS
A
L = 0.1mH TC = 25 ° C TC = 70 ° C
EAS PD TJ, TSTG
mJ W ° C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.5 62.5
UNITS ° C/W
Pulse width limited by maximum junction temperature.
P1004BD Datasheet
