P1004BD Datasheet and Specifications PDF

The P1004BD is a N-Channel Enhancement Mode Field Effect Transistor.

Part NumberP1004BD Datasheet
ManufacturerNiko-Sem
Overview NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1004BD TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXI. e Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C 40 1.7 2.0 3.0 ±100 1 10 µA nA V LIMITS UNIT MIN TYP MAX REV 1.3 Mar-18-2010 1 Free D.
Part NumberP1004BD Datasheet
DescriptionN-Channel Enhancement Mode MOSFET
ManufacturerUNIKC
Overview P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Note. ETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resist.

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150+ : 0.2503 USD
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