Click to expand full text
P117AATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
75V
11mΩ @VGS = 10V
80A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID
80 70
IDM
320
Avalanche Current
IAS
46
Avalanche Energy
L = 1mH
EAS
1082
Power Dissipation
TC = 25 °C
PD
300
TC = 100 °C
150
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Limited by package. 2Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 0.5 62.
P117AATX Datasheet
