Full PDF Text Transcription for P1610AT (Reference)
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P1610AT. For precise diagrams, and layout, please refer to the original PDF.
P1610AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ @VGS = 10V 51A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)...
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1A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C ID 51 TC = 100 °C 32 IDM 150 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. SYMBOL RqJC RqJA TYPICAL
P1610AT Datasheet
