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P1610AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
110V
16mΩ @VGS = 10V
51A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C
ID
51
TC = 100 °C
32
IDM
150
Avalanche Current
IAS
12
Avalanche Energy
L = 1mH
EAS
72
Power Dissipation
TC = 25 °C TC = 100 °C
PD
96 38
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1.3 62.
P1610AT Datasheet
