Full PDF Text Transcription for P1615ATA (Reference)
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P1615ATA. For precise diagrams, and layout, please refer to the original PDF.
P1615ATA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ @VGS = 10V 68A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Not...
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V 68A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 68 43 IDM 270 Avalanche Current IAS 30 Avalanche Energy L = 1mH EAS 435 Power Dissipation TC = 25 °C TC = 100 °C PD 192 77 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 0.65 °C / W
P1615ATA Datasheet
