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P5010AT - N-Channel MOSFET

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Datasheet Details

Part number P5010AT
Manufacturer UNIKC
File Size 327.59 KB
Description N-Channel MOSFET
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P5010AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 30A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 30 18 IDM 70 Avalanche Current IAS 37 Avalanche Energy L = 0.1mH EAS 70 Power Dissipation TC = 25 °C PD 96 TC = 100 °C 38 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.3 °C / W Ver 1.
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