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P5010AV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
100V
50mΩ @VGS = 10V
5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 100 °C
ID
5 3
IDM
40
Avalanche Current
IAS
38
Avalanche Energy
L = 0.1mH
EAS
73
Power Dissipation
TA= 25 °C TA =100 °C
PD
2 1.28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
P5010AV Datasheet
