The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PA110BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
110mΩ @VGS = 10V
ID 3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
TC = 25 °C
6
Continuous Drain Current
TA = 25 °C
ID
3.2
Pulsed Drain Current1
TA = 100 °C
IDM
2 15
Avalanche Current
IAS 6.6
Avalanche Energy
L = 0.1mH
EAS
2.2
Power Dissipation
TA = 25 °C TA = 100 °C
PD
2.5 1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
14
1Pulse width limited by maximum junction temperature.
PA110BL Datasheet
