Click to expand full text
PK6H6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.8mΩ @VGS = 10V
ID 46A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current
TC = 25 °C TC = 100 °C
TA = 25 °C TA= 70 °C
ID IDM ID
46 29 100
A 16 13
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24 mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.5
W
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4 W
2.
PK6H6BA Datasheet
