10N60Z Description
Power MOSFET The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This po wer MOSFET is usually use d at high s peed s witching a pplications in po wer supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
10N60Z Key Features
- RDS(ON) = 0.75Ω@VGS =10V
- Low gate charge ( typical 44nC)
- Low CRSS ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION