Unisonic Technologies 10N65Z
The UT C 10N 65Z is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av alanche char acteristics. This po wer MOSF ET is usua lly used at high speed switching applications in power supplies, PWM motor co ntrols, h igh efficient D C to D C converters and b ridge circuits.| Part No. | 10N65Z |
|---|---|
| Datasheet | 10N65Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 10A 650V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Power MOSFET●
FEATURES
* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL
● ORDERING INFORMATION Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 10N65ZL-TF1-T 10N65ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-927. B 10N65Z
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 20 V Avalanche Current (Note 2) IAR 10 A Continuous I A D 10 Drain Current Pulsed (Note 2) IDM 38 A Single Pulsed (Note 3) EAS 110 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ + 150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
