Unisonic Technologies 10N70-Q
10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 10N70-Q |
|---|---|
| Datasheet | 10N70-Q Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC 1 1●
FEATURES
* RDS(ON) =1.2Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET TO-220F TO-220F1
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70L-TF1-T 10N70G-TF1-T 10N70L-TF3-T 10N70G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F Pin Assignment 123 GDS GDS Packing Tube Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-967. A 10N70-Q Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 10 A Drain Current Continuous Pulsed (Note 2) ID IDM 10 A 40 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 400 mJ 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
