Unisonic Technologies 10N80
The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 10N80 |
|---|---|
| Datasheet | 10N80 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=5.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N80L-TF1-T 10N80G-TF1-T 10N80L-TF2-T 10N80G-TF2-T 10N80L-T3P-T 10N80G-T3P-T 10N80L-TQ2-T 10N80G-TQ2-T 10N80L-TQ2-R 10N80G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-3P TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-218.N 10N80
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R502-218.N 10N80 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Continuous Drain Current (TC = 25°С) VGSS ID ±30 V 10 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pu...
