Nell Power Semiconductor 10N80
10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
| Part No. |
10N80 |
| Datasheet |
10N80
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| Manufacturer |
 Nell Power Semiconductor |
| Description |
N-Channel Power MOSFET |
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DESCRIPTION
The Nell threshold voltage of 5 volts. FEATURES
RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max.) Low reverse transfer capacitance (CRSS = 15pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-3PB (10N80B) GDS TO-220F (10N80AF) D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 10 800 1.1 @ VGS = 10V 58 ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=10A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=10A, L=17.3mH dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD Linear derating factor above TC=25°C TC=25°C TC=...
