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10N80 - N-Channel Power MOSFET

General Description

The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max.

threshold voltage of 5 volts.

Key Features

  • RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max. ) Low reverse transfer capacitance (CRSS = 15pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-3PB (10N80B) GDS TO-220F (10N80AF) D (Drain) G (Gate) S (Source).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max.