10N80C Datasheet | Fairchild Semiconductor

FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features - 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V - Low gate charge ( typical 44 nC) - Low Crss ( typical 15pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...