Unisonic Technologies 2N70-M
2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 2N70-M |
|---|---|
| Datasheet | 2N70-M Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 17.2nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL 1 1 Power MOSFET TO-220F TO-251
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N70L-TF3-T 2N70G-TF3-T TO-220F 2N70L-TM3-T 2N70G-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A53.c 2N70-M Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 2.0 A Drain Current Continuous Pulsed (Note 2) ID IDM 2.0 A 8.0 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 140 mJ 2.8 mJ Peak Diode Recovery dv...
