2N70-HC Key Features
- RDS(ON) ≤ 4.3 Ω @ VGS=10V, ID=1.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2N70-M | N-CHANNEL POWER MOSFET |
Motorola Semiconductor |
2N700 | PNP Transistor |
Microchip Technology |
2N7000 | N-Channel DMOS FET |
Motorola Semiconductor |
2N7000 | TMOS FET Transistor |
NXP Semiconductors |
2N7000 | N-channel MOSFET |