DESCRIPTION
FEATURES
* RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitance ( CRSS = typical 5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3. Drain 3 1 2 SOT-23-3 (JEDEC TO-236) 2.Gate 1.Source ORDERING INFORMATION Ordering Number 2N7002LG-AE2-R Package SOT-23-3 Pin Assignment 123 SGD Packing Tape Reel MARKING Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-284.c 2N7002L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS
(Ta =25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=1.0MΩ) VDGR 60 V Gate-Source Voltage Continuous Non-repetitive (tP≦50μs) VGSS VGSM ±20 ±40 V V Drain Current Continuous(TC=25°C) Pulse(Note 2) ID ±115 ±800 mA Power Dissipation (Ta = 25°C) Derate above 25°C PD 225 mW 1.8 mW /°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Unisonic Technologies
