onsemi 2N7002L
N-Channel MOSFET
FEATURES
● 2V Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VDSS VDGR ID ID IDM 60 60 ± 115 ± 75 ± 800 Vdc Vdc mAdc VGS ± 20 Vdc VGSM ± 40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 225 mW 1.8 mW/°C 556 °C/W Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 300 mW 2.4 mW/°C 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.