Unisonic Technologies 2N7002DW
The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 2N7002DW |
|---|---|
| Datasheet | 2N7002DW Download |
| Manufacturer |  Unisonic Technologies |
| Description | 60V 300mA Dual N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N7002DWL-AL6-R 2N7002DWG-AL6-R SOT-363 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123456 S1 G1 D2 S2 G2 D1 Packing Tape Reel
● MARKING 3P L: Lead Free G: Halogen Free Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.F 2N7002DW Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise noted.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Gate Source Voltage Continuous Non Repetitive(tP<50μs) VGSS 20 40 V Drain Current Continuous Pulsed ID 300 800 mA Power Dissipation Derated Above 25°C PD 200 mW 1.6 mW/°C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
