3N60Z Datasheet PDF | Unisonic Technologies

Unisonic Technologies 3N60Z

3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Part No.	3N60Z
Datasheet	3N60Z Download
Manufacturer	Unisonic Technologies
Description	600V N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Power MOSFET 1 The UTC TO-220F

FEATURES

* RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 3N60ZL-TF3-T 3N60ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-744.A Datasheet pdf - 3N60Z

ABSOLUTE MAXIMUM RATINGS

(TC = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note...